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Product Detailed Parameters
- Description：JFET N-CH 35V TO92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：35 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：2 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：500 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：100 Ohms
- Power - Max：625 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The onsemi J113 is an N-channel Junction Field-Effect Transistor (JFET) designed for low-level analog switching applications. It features a TO-92 package with three leads and interchangeable source and drain terminals. Key electrical parameters include a gate-source breakdown voltage of -35 V, a zero-gate voltage drain current (IDSS) of 2.0 mA at VDS = 15 V, and a maximum drain-source on resistance (rDS(on)) of 100 Ω. The device operates within a junction temperature range of -55°C to 150°C and has a total device dissipation rating of 625 mW.
Feature Summary
- Designed specifically for low-level analog switching, sample-and-hold circuits, and chopper-stabilized amplifiers.
- Features interchangeable source and drain terminals, simplifying circuit layout and design flexibility.
- Manufactured using Process 51 technology to ensure consistent performance characteristics.
Applications
- Low-level analog signal switching
- Sample-and-hold circuits
- Chopper-stabilized amplifier designs
Procurement Notes
Verify the specific ordering suffix when purchasing, as it determines the shipping format (e.g., bulk units versus tape and reel). Confirm that the component is Pb-Free compliant if required by assembly standards. Ensure the selected variant matches the required package type, as MMBFJ113 denotes the SOT-23 surface-mount version rather than the through-hole J113.
Selection Notes
Select the J113 over other variants based on its specific IDSS and rDS(on) ranges suitable for precise low-current switching. Consider the TO-92 package for through-hole requirements or the MMBFJ113 for surface-mount needs. Validate thermal dissipation limits against ambient operating conditions, noting the distinct thermal resistance values between leaded and surface-mount packages.
Part Context
The J113 belongs to a family of N-channel JFETs that includes the J111, J112, and their surface-mount counterparts MMBFJ111, MMBFJ112, and MMBFJ113. These devices share similar structural designs but differ in electrical thresholds and packaging. The J113 specifically targets applications requiring lower drain currents compared to the J111.
Replacement Considerations
Direct substitutes within the same family include the MMBFJ113 for surface-mount equivalents. Cross-family replacements require matching IDSS and rDS(on) specifications carefully, as these parameters vary significantly between J111, J112, and J113 variants.
