J175,116

Overview

The NXP J175,116 is a P-channel silicon junction field-effect transistor (JFET) designed for general-purpose small-signal applications. It operates in depletion mode with a maximum drain-source voltage of 30 V and a continuous drain current of 70 mA. The device features a typical drain-source on-resistance of 125 Ω and an IDSS of 7 mA at VGS=0V and VDS=15V. Packaged in a plastic TO-92 (SC-43) housing with three pins, it supports a maximum operating temperature of 150 °C and a power dissipation of 400 mW.

Feature Summary

• P-channel silicon construction optimized for analog signal handling
• Depletion mode operation suitable for low-noise circuit environments
• Compact plastic TO-92 package design for standard mounting

Applications

• Analog switching circuits
• Low-noise signal processing stages
• General-purpose small-signal amplification

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the specific ordering suffix matches project requirements. Note that this item may be listed as no longer manufactured; check for availability of equivalent replacement parts from the same product family before finalizing procurement plans.

Selection Notes

Select this component when a P-channel JFET with a 30 V breakdown voltage is required. Ensure the application current does not exceed 70 mA. Verify that the TO-92 package dimensions fit the PCB layout constraints. Consider thermal management capabilities given the 400 mW power rating.

Part Context

This part belongs to the J174-J177 series of P-channel silicon FETs published by NXP Semiconductors. These transistors are specified for discrete semiconductor applications requiring reliable small-signal performance. The series provides standardized electrical characteristics for consistent design integration across various electronic systems.

Replacement Considerations

Public confirmed substitute part numbers: J174, J176, J177.