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The J176 is a P-Channel Junction Field Effect Transistor (JFET) switch manufactured by onsemi. It features a maximum Drain-Gate Voltage of -30 V and operates within a junction temperature range of -55°C to +150°C. The device provides a Zero-Gate Voltage Drain Current (IDSS) ranging from -2.0 mA to -25 mA and a Drain-Source On Resistance (rDS(on)) with a maximum value of 250 Ω. Total device dissipation is rated at 350 mW, derating by 2.8 mW/°C above 25°C.
Verify the specific package configuration required for the application, as the J176 is available in both TO-92 and SOT-23 formats. Confirm that the selected variant meets the necessary thermal resistance and power dissipation requirements for the intended operating environment. Ensure compliance with all absolute maximum ratings during design integration.
Select the J176 based on the required IDSS range and rDS(on) specifications for the target circuit. Consider the physical package constraints when choosing between through-hole TO-92 or surface-mount SOT-23 options. Evaluate the thermal management needs relative to the 350 mW total device dissipation limit and the specified derating curve.
The J176 belongs to a family of P-Channel JFET switches sourced from Process 88. This series includes variants such as the J174, J175, and J177, which share similar structural characteristics but differ in electrical parameters like IDSS and rDS(on). The component is part of onsemi's discrete semiconductor portfolio focused on analog signal processing.
Direct substitutes within the same family include the J174, J175, and J177. Surface-mount equivalents are available under the MMBFJ17x designation. Verify that alternative parts match the required voltage ratings and current specifications before implementation.
Yes, the datasheet notes that the source and drain terminals are interchangeable.
The Gate-Source Breakdown Voltage (B(BR)GSS) is 30 V.
The maximum operating and storage junction temperature is +150°C.