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Product Detailed Parameters
- Description：JFET N-CH 25V TO92
- Series：J212
- Mfr：Linear Integrated Systems, Inc.
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：15 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：4 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：4pF @ 15V
- Resistance - RDS(On)：-
- Power - Max：360 mW
- Operating Temperature：-55°C ~ 150°C
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92
- Grade：-
- Qualification：-
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Overview
The Linear Integrated Systems J212 is a single-channel, low-noise N-channel JFET general-purpose amplifier housed in a TO-92 3L RoHS package. It features a minimum forward transconductance (gfs) of 7000 µmho and a maximum gate reverse current (IGSS) of 100 pA. The device exhibits a typical input capacitance (CISS) of 4 pF at 1 MHz and an equivalent short-circuit input noise voltage of 10 nV√Hz at 1 kHz. Absolute maximum ratings include a gate-source voltage of -25 V, a gate current of 10 mA, and total device dissipation of 360 mW at 25 °C with derating of 3.27 mW/°C. The operating temperature range spans from -55 °C to +150 °C.
Feature Summary
- High gain performance with a minimum forward transconductance of 7000 µmho
- High input impedance characterized by a maximum gate reverse current of 100 pA
- Low capacitance design with a typical input capacitance of 4 pF
Applications
- General purpose amplification
- Low noise signal processing applications
Procurement Notes
Verify the specific ordering suffix matches the required package configuration. Confirm that the component meets RoHS compliance standards as indicated for the TO-92 3L variant. Ensure the procurement documentation aligns with the manufacturer's specifications for the J212 part number to guarantee correct electrical characteristics and physical form factor.
Selection Notes
Select the J212 when high transconductance and low noise are critical requirements. This model offers superior gain compared to the J210 variant while maintaining low input capacitance. Consider the TO-92 package for through-hole mounting needs. Evaluate thermal derating requirements if operating above 25 °C ambient temperature to ensure safe dissipation levels.
Part Context
Linear Integrated Systems manufactures this discrete semiconductor using proprietary processes derived from expertise at Amelco, Union Carbide, Intersil, and Micro Power Systems. The company focuses on producing high-performance components, positioning the J212 within its lineup of low-noise N-channel JFETs designed for demanding analog circuit applications.
Replacement Considerations
Public datasheets identify the J212 as a direct replacement for Fairchild, NXP, and Siliconix-Vishay equivalent devices. Verify pinout compatibility and electrical parameter matching before substituting these legacy parts in existing designs.
FAQ
What is the minimum forward transconductance for the J212?
The J212 has a minimum common-source forward transconductance (gfs) of 7000 µmho.
How does the input capacitance compare across the series?
The J212 exhibits a typical common-source input capacitance (CISS) of 4 pF at 1 MHz, consistent with the J210 and J211 variants.
What is the absolute maximum gate-source voltage rating?
The absolute maximum gate-drain or gate-source voltage rating is -25 V.
