JAN1N5196/TR

Single Diodes Overview

The JAN1N5196/TR is a small signal switching diode manufactured by Microchip Technology. It features a peak repetitive reverse voltage of 225 V and a maximum average forward rectified current of 200 mA. The device has a power dissipation rating of 500 mW and operates within a temperature range of -65 °C to +175 °C. It utilizes a DO-35 axial leaded package for through-hole mounting.

Single Diodes Feature Summary

• Designed for high-speed signal switching and computer logic applications
• Capable of operation in extreme thermal environments up to 175 °C
• Constructed with silicon planar technology for reliability

Single Diodes Applications

• High-speed digital logic circuits
• Computer input/output protection
• Signal clipping and clamping

Single Diodes Procurement Notes

Verify the specific JAN suffix indicates military-grade qualification requirements against standard commercial variants. Confirm the /TR suffix denotes tape-and-reel packaging for automated assembly processes. Ensure compatibility with MIL-19500/118F specifications if aerospace or defense compliance is required for the project.

Single Diodes Selection Notes

Select this component when a robust, high-temperature capable switching diode is needed for through-hole designs. Compare the 225 V reverse voltage rating against circuit peak inverse voltage demands. Evaluate the 500 mW power dissipation limit relative to expected forward current loads to ensure safe operating area margins are maintained.

Single Diodes Part Context

This part belongs to the JAN series of discrete semiconductors produced by Microchip Technology, formerly Microsemi. The JAN designation typically signifies components manufactured to meet strict military quality standards and environmental testing protocols defined by government specifications.

Single Diodes Replacement Considerations

JAN1N5196