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JAN1N5307UR-1/TR is listed in the Current Regulation - Diodes, Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE CUR REG 100V 2.64MA 500MW. Review the specifications below when checking this part for your BOM.
The JAN1N5307UR-1/TR is a current regulator diode manufactured by Microchip Technology. It provides a regulated current of 2.64 mA with a maximum anode-to-cathode voltage of 100 V and a power dissipation rating of 500 mW. The device utilizes a DO-213AB (MELF) surface-mount package and supports through-hole mounting configurations in related variants. It operates within a junction temperature range of -65°C to 175°C and complies with MIL-PRF-19500/463 military qualification standards.
Verify the specific suffix UR-1/TR against official Microchip documentation to confirm surface-mount MELF configuration and tape-and-reel packaging. Ensure procurement channels provide valid military grade certification records consistent with MIL-PRF-19500/463 requirements for this component series.
Select this component when a fixed 2.64 mA current source is required in a compact surface-mount form factor. Confirm that the 100 V breakdown voltage aligns with the system's operational limits. Consider the DO-213AB footprint constraints during PCB layout design to ensure proper thermal management and solder joint integrity.
This part belongs to the JAN1N5307 family of current regulator diodes produced under military specifications. It shares functional parameters with axial lead equivalents but differs in physical package geometry. The designation indicates compliance with strict military quality assurance protocols for defense and space applications.
Parametric equivalents include JAN1N5307UR-1 and JAN1N5307-1. Verify pinout compatibility and package dimensions before substitution. Consult official datasheets to confirm electrical parameter matching for critical circuit implementations.
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