JAN2N1613

Single Bipolar Transistors Overview

The JAN2N1613 is a military-grade NPN power bipolar junction transistor manufactured by Microchip Technology. It is designed for through-hole mounting in the TO-39 package. The device supports a collector-emitter voltage of 30V and a continuous collector current of 500mA. Power dissipation is rated at 800mW. It operates within a standard temperature range suitable for rugged applications.

Single Bipolar Transistors Feature Summary

• Military-grade construction ensuring high reliability
• Through-hole TO-39 package design
• NPN power transistor configuration

Single Bipolar Transistors Applications

• Ruggedized electronic systems
• Military grade circuit protection
• High-reliability switching applications

Single Bipolar Transistors Procurement Notes

Verify that the specific part number includes the JAN prefix to ensure compliance with military specifications. Confirm package integrity and lead condition upon receipt. Cross-reference datasheets for thermal management requirements during installation.

Single Bipolar Transistors Selection Notes

Select this component when military-grade reliability is required for low-power switching tasks. Ensure the application voltage does not exceed 30V and current remains below 500mA. Consider thermal constraints associated with the TO-39 package for proper heat dissipation.

Single Bipolar Transistors Part Context

This component belongs to the single bipolar transistor category from Microchip Technology. It serves as a specialized variant within the broader transistor portfolio, focusing on durability and performance in demanding environments compared to commercial equivalents.

Single Bipolar Transistors Replacement Considerations

Consult official substitution lists for compatible NPN transistors with matching voltage and current ratings. Verify pinout compatibility before replacing existing components in established designs.