SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The JAN2N2060 is a dual NPN silicon small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It is housed in a hermetically sealed metal TO-78-6 package designed for high-reliability applications. The device supports a maximum collector current of 500 mA and operates with a collector-emitter voltage of 60 V. Key electrical characteristics include a collector-base voltage of 100 V, an emitter-base voltage of 7 V, and a power dissipation rating of 2.12 W. The component functions within a temperature range from -65°C to +200°C, featuring a minimum DC current gain of 25 at 10 uA and 5 V.
Verify the specific suffix designation against official Microchip documentation to confirm exact binning and testing standards. Ensure procurement channels are authorized to guarantee authenticity for military-grade hardware. Request full traceability documentation including lot codes and test reports upon delivery.
Select this component when a dual NPN topology is required in a hermetic metal package. Confirm that the 60V collector-emitter voltage and 500mA current limits meet circuit requirements. Verify compatibility with high-temperature operating conditions exceeding standard commercial ranges.
This part belongs to the JAN series of transistors, which adhere to strict military quality standards. It serves as a ruggedized alternative to commercial equivalents, offering superior performance in harsh environments where standard plastic-packaged devices would fail due to moisture or mechanical stress.
Direct substitutes must match the TO-78-6 hermetic package and dual NPN configuration. Verify pinout compatibility and ensure equivalent voltage and current ratings. Cross-reference with other JAN-series parts for functional equivalence.