SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The JAN2N2920U/TR is an NPN silicon dual transistor qualified per MIL-PRF-19500/355. It features a collector-emitter voltage (VCEO) of 60 Vdc and a collector current (IC) of 30 mAdc. Total power dissipation is 350 mW at +25°C ambient temperature. The device operates within a junction temperature range of -65 to +200 °C. Forward-current transfer ratio (hFE) ranges from 175 to 1000 at IC = 1.0mAdc and VCE = 5.0Vdc. Collector-emitter saturation voltage (VCE(sat)) is 0.3 Vdc at IC = 1.0mAdc and IB = 100μAdc.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and qualification level. Ensure that the procurement channel provides traceability to MIL-PRF-19500/355 standards. Confirm RoHS status and environmental compliance requirements prior to purchase, as military-grade parts may have specific regulatory constraints.
Select this component when a dual NPN transistor with high gain and wide temperature tolerance is required. Compare hFE ranges and saturation voltages against circuit requirements. Consider the TO-78 surface mount package dimensions for PCB layout compatibility. Verify thermal derating curves if operating above +25°C ambient temperature.
This part belongs to the 2N2919/2N2920 family of NPN silicon dual transistors. The 'JAN' prefix indicates it is a JANS/JANTX qualified device meeting military specifications. The 'U' suffix denotes the surface mount TO-78 package variation. It serves as a ruggedized alternative to commercial equivalents for defense and aerospace applications.
Direct replacements include other MIL-PRF-19500/355 qualified devices such as the JAN2N2920 or JAN2N2920L. Verify pinout compatibility and electrical parameters before substitution. Surface mount variants like JAN2N2919U/TR offer similar functionality in compatible packages.