JAN2N3767

Single Bipolar Transistors Overview

The JAN2N3767 is a power NPN silicon bipolar junction transistor manufactured by Microchip Technology. It is housed in a TO-66 metal flange mount package designed for high-reliability applications. The device supports a maximum collector-emitter voltage of 80 V and a continuous collector current of 1 A. It features a minimum DC current gain (hFE) of 40 and can dissipate up to 25 W of power at a case temperature of +25 °C. The component operates within a temperature range of -65 °C to +200 °C.

Single Bipolar Transistors Feature Summary

• Constructed with a metal TO-66 flange mount package for efficient thermal dissipation and robust mechanical stability.
• Engineered as an NPN silicon power transistor suitable for high-voltage switching and amplification tasks.
• Qualified under MIL-PRF-19500/518 standards to ensure performance consistency in demanding environments.

Single Bipolar Transistors Applications

• Military and aerospace electronic systems requiring radiation-hardened or high-reliability components
• High-power RF amplifier circuits operating within specified voltage and current limits
• Industrial control systems utilizing flange-mounted transistors for thermal management

Single Bipolar Transistors Procurement Notes

Verify the specific revision level and manufacturing lot traceability when sourcing this component, as it falls under military-grade specifications. Confirm that the supplier provides documentation adhering to MIL-PRF-19500/518 standards. Ensure the physical package matches the TO-66 form factor required for your heat sink interface. Check for any product change notifications that might affect pinout or material composition before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select the JAN2N3767 when a ruggedized NPN power transistor is required for extreme temperature environments. Its TO-66 package facilitates direct mounting to chassis heatsinks, simplifying thermal design compared to plastic packages. Consider its 80 V breakdown voltage and 1 A current capacity against your circuit's peak load requirements. This component is appropriate for designs where long-term reliability and environmental resistance are prioritized over cost or miniaturization.

Single Bipolar Transistors Part Context

This part belongs to the 2N3766/2N3767 family of power bipolar transistors produced by Microchip Technology. The JAN prefix indicates compliance with strict military quality and screening standards. These devices are commonly used in legacy and modern defense electronics where proven silicon technology meets rigorous durability requirements. The family offers a balance of moderate power handling and high voltage tolerance in a standardized metal can package.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2N3767 from other qualified manufacturers, provided they meet the same electrical and mechanical specifications. Verify compatibility with MIL-PRF-19500/518 if military qualification is mandatory. Alternative packages like TO-213AA may require adapter solutions due to differing mounting dimensions.