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The JAN2N3810L is a silicon PNP dual small-signal bipolar junction transistor manufactured by Microchip Technology. It utilizes a TO-78-6 hermetically sealed metal can package designed for through-hole mounting. The device supports a maximum DC collector current of 50 mA and withstands collector-emitter and collector-base voltages of 60 V each, with an emitter-base voltage rating of 5 V. Power dissipation is rated at 350 mW. The component operates within a temperature range of -65°C to +200°C. DC current gain (hFE) ranges from a minimum of 100 to a maximum of 450 under specified test conditions.
Verify the specific ordering suffix against the manufacturer's datasheet to confirm radiation hardness levels and screening standards. Ensure the procurement channel provides valid traceability documentation. Confirm that the delivered components match the JAN specification requirements for the intended application environment.
Select this component when a hermetically sealed dual PNP transistor is required for high-reliability environments. Verify that the 60V voltage ratings and 50mA current limits align with circuit demands. Consider the TO-78-6 package dimensions for board layout compatibility and thermal management requirements in the final design.
This part belongs to the 2N3810 series of dual small-signal BJTs. It represents the JAN (Military Grade) variant, which adheres to strict MIL-PRF-19500 specifications. This distinguishes it from commercial equivalents by offering enhanced quality control and radiation tolerance suitable for defense and space applications.
Compatible substitutes include JANS2N3810L and JANTXV2N3810L. These variants share the same electrical characteristics but differ in screening levels and radiation hardness qualifications according to military standards.