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The JAN2N3810U is a dual small-signal PNP bipolar junction transistor manufactured by Microchip Technology. It features silicon construction and operates within a temperature range of -65°C to +200°C. Key electrical parameters include a maximum collector current of 50 mA, a collector-emitter voltage of 60 V, and a power dissipation of 350 mW. The device offers a minimum DC current gain (hFE) of 100 at 10 uA and 5 V, with a maximum hFE of 450 at 100 uA and 5 V. It utilizes a TO-78-6 hermetic metal can package.
Verify the specific ordering suffix against official Microchip documentation to confirm radiation hardness and screening levels. Confirm package type and pinout compatibility before integration. Request manufacturer certificates of conformance and traceability records to ensure compliance with project reliability standards.
Select this component when high-temperature stability and radiation tolerance are required. Compare the 350 mW power dissipation limit against thermal design requirements. Ensure the 60 V voltage rating exceeds peak circuit voltages. Verify that the TO-78-6 package fits the available board space or chassis mounting constraints.
This part belongs to the 2N3810 series of dual PNP transistors. It shares core electrical characteristics with other variants like JANTXV2N3810U but differs in manufacturing lot screening and radiation hardening specifications defined by the prefix.
JANTXV2N3810U
The maximum operating temperature is +200°C.
The device uses a TO-78-6 hermetic metal can package.
The DC current gain ranges from a minimum of 100 to a maximum of 450 under specified test conditions.