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The JAN2N3811 is a dual PNP silicon small-signal bipolar junction transistor manufactured by Microsemi. It features two independent PNP transistors integrated into a single hermetically sealed metal can package, specifically the TO-77 form factor with eight bottom-mounted wire leads. The device is qualified to MIL-PRF-19500 standards and offers a maximum collector current of 0.05 A and a collector-emitter breakdown voltage of 60 V. Designed for high reliability in harsh environments, it supports operating temperatures up to 200 °C and provides radiation hardness against total ionizing doses of 100 krad(Si).
Verify the specific suffix designation when ordering, as variations such as JANTX or JANTXVR indicate different screening levels under the same base part number. Confirm that the procurement source accepts lead times associated with specialized military qualification processes. Ensure compatibility with existing hermetic packaging requirements for the target assembly.
Select this component when a dual PNP topology is required within a hermetically sealed metal package. The TO-77 footprint dictates specific board layout constraints compared to plastic packages. Consider the 60 V collector-emitter voltage limit and 0.05 A current rating during circuit design to ensure operation remains within safe limits.
This component belongs to the 2N3811 family of dual PNP transistors produced by Microsemi. The JAN prefix denotes full military qualification per MIL-PRF-19500. Other variants in this series include JANTX and JANTXV, which offer enhanced screening but share the fundamental electrical characteristics and physical package dimensions of the base JAN2N3811 model.
Direct replacements must match the TO-77 metal can package and 8-pin wire lead configuration. Equivalent parts from other manufacturers must provide identical dual PNP functionality and meet MIL-PRF-19500 standards to maintain system radiation hardness and hermetic sealing integrity.