Single Bipolar Transistors JAN2N5157 product image

JAN2N5157

  • Description:TRANS NPN 500V 3.5A TO204AA
  • Series:-

SKU:d57b4a88499c Category: Brand:

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JAN2N5157 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 500V 3.5A TO204AA. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JAN2N5157

  • Description:TRANS NPN 500V 3.5A TO204AA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):3.5 A
  • Voltage - Collector Emitter Breakdown (Max):500 V
  • Vce Saturation (Max) @ Ib, Ic:2.5V @ 700mA, 3.5A
  • Current - Collector Cutoff (Max):250µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 1A, 5V
  • Power - Max:5 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-204AA, TO-3
  • Supplier Device Package:TO-204AA (TO-3)
  • Grade:Military
  • Qualification:MIL-PRF-19500/371

Single Bipolar Transistors datasheet and documents for JAN2N5157

JAN2N5157

Single Bipolar Transistors Overview

The JAN2N5157 is a silicon NPN power bipolar junction transistor manufactured by Microchip Technology. It is designed for high-voltage and high-current applications, featuring a collector-emitter voltage rating of 500V and a continuous collector current capacity of 3.5A. The device utilizes a hermetically sealed TO-3 metal case package, providing robust thermal performance and mechanical durability suitable for demanding environments.

Single Bipolar Transistors Feature Summary

  • Hermetically sealed TO-3 metal case construction for enhanced environmental protection
  • High voltage capability with 500V collector-emitter breakdown rating
  • Designed for high-power switching and amplification applications

Single Bipolar Transistors Applications

  • Military and aerospace power supply circuits
  • High-voltage industrial switching systems
  • Ruggedized amplifier stages in defense electronics

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized Microchip distributors or certified suppliers. Confirm that the received units match the JAN2N5157 designation and exhibit the specified TO-3 packaging. Request official datasheets and material compliance documentation to ensure adherence to military-grade specifications before integration into critical systems.

Single Bipolar Transistors Selection Notes

Select this component when high-voltage isolation and rugged mechanical packaging are required. The TO-3 case offers superior heat dissipation compared to plastic packages. Ensure circuit design accommodates the 500V rating and 3.5A current limits. Consider thermal management strategies due to the power handling capabilities inherent in this silicon BJT structure.

Single Bipolar Transistors Part Context

This part belongs to the Microsemi HI-REL [MIL] product line, indicating qualification for harsh environment applications. It is classified as a discrete semiconductor product within the bipolar transistor category. The JAN prefix typically denotes military-grade screening standards, distinguishing it from commercial variants.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other MIL-spec NPN transistors in TO-3 packages with comparable 500V and 3.5A ratings. Verify pinout compatibility and thermal resistance characteristics. Cross-reference with Microchip's approved replacement list for updated manufacturing sources.

JAN2N5157JAN2N5157

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