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Product Detailed Parameters
- Description：TRANS 2NPN DUAL 40V 600MA 6-SMD
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：600mA
- Voltage - Collector Emitter Breakdown (Max)：40V
- Vce Saturation (Max) @ Ib, Ic：900mV @ 30mA, 300mA
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 10V
- Power - Max：600mW
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, No Lead
- Supplier Device Package：6-SMD
- Grade：Military
- Qualification：MIL-PRF-19500/495
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Overview
The JAN2N5794U is a dual small-signal NPN bipolar junction transistor (BJT) manufactured by Microchip Technology. Designed for surface-mount applications, this silicon component features a maximum collector-emitter voltage of 40 V and a collector-base voltage of 75 V. It supports a continuous collector current of 600 mA with a power dissipation rating of 600 mW. The device operates within an extended temperature range from -65°C to +200°C. Key electrical characteristics include a maximum DC current gain of 300 at 150 mA and 10 V, and a collector-emitter saturation voltage of 900 mV.
Feature Summary
- Dual NPN configuration in a single surface-mount package
- Extended high-temperature operation up to +200°C
- High DC current gain capability for signal amplification
Applications
- Military aerospace electronic systems
- High-reliability space instrumentation
- Defense communication equipment
Procurement Notes
Verify the JAN2N5794U datasheet for specific military qualification standards and radiation hardness levels before integration. Confirm that the SMD/SMT mounting style aligns with the target PCB design constraints. Ensure thermal management strategies accommodate the 600 mW power dissipation limit under worst-case operating conditions.
Selection Notes
Select the JAN2N5794U when dual NPN switching or amplification is required in extreme thermal environments. Compare its 40 V VCEO and 600 mA IC limits against circuit requirements. Consider the +200°C maximum operating temperature as a distinct advantage over standard commercial alternatives for harsh environment deployments.
Part Context
This component belongs to the JAN series of dual small-signal BJTs produced by Microchip Technology. It shares the same internal die structure as the JANS2N5794U/TR but differs in packaging and specific qualification tiers. The JAN designation indicates compliance with specific military-grade manufacturing processes.
Replacement Considerations
Publicly confirmed direct substitutes are not available in the provided documentation. The JANS2N5794U/TR is a related variant with identical electrical specifications but may differ in packaging suffixes and specific reliability certifications.
