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Product Detailed Parameters
- Description：TRANS 2PNP 60V 600MA TO-78-6
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：600mA
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 10V
- Power - Max：600mW
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-78-6 Metal Can
- Supplier Device Package：TO-78-6
- Grade：Military
- Qualification：MIL-PRF-19500/496
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Overview
The JAN2N5796 is a dual PNP bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is designed for surface mount installation. The device features a maximum collector-emitter voltage (VCEO) of 60 V and a collector-base voltage (VCBO) of 60 V. The emitter-base voltage (VEBO) is rated at 5 V. Power dissipation capability reaches 5 W, with an operating temperature range spanning from -65 °C to +175 °C. The component exhibits a maximum DC current gain (hFE) of 300 when tested at 150 mA and 10 V.
Feature Summary
- Dual configuration integrating two PNP transistors within a single package
- Extended thermal stability supporting operation up to +175 °C
- High power dissipation rating suitable for demanding applications
Applications
- Military aerospace electronic systems
- Spacecraft instrumentation circuits
- High-reliability signal processing modules
Procurement Notes
Verify the specific suffix designation against official Microchip documentation to confirm exact packaging and qualification standards. Ensure procurement channels provide valid traceability records required for defense or aerospace contracts. Confirm RoHS compliance status as indicated in technical specifications prior to ordering.
Selection Notes
Select this component where dual PNP switching or amplification is required in high-temperature environments. Evaluate the 60 V breakdown limits against circuit peak voltages. Consider the 5 W thermal dissipation requirements and ensure adequate heat sinking strategies are implemented for the chosen surface mount footprint.
Part Context
This part belongs to the JAN series of dual small-signal BJTs produced by Microchip Technology. The JAN prefix typically denotes military-grade qualification standards. It serves as a specialized discrete semiconductor solution for ruggedized electronics requiring high reliability and wide temperature tolerance.
Replacement Considerations
Consult official Microchip cross-reference lists for verified equivalents. Do not substitute with commercial grade parts without validating thermal and radiation hardness requirements.
