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Product Detailed Parameters
- Description：TRANS 2PNP 60V 600MA TO-78-6
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：600mA
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 10V
- Power - Max：600mW
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-78-6 Metal Can
- Supplier Device Package：TO-78-6
- Grade：Military
- Qualification：MIL-PRF-19500/496
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Overview
The JAN2N5796A is a dual PNP small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-78-6 hermetic package designed for through-hole mounting. The device features a maximum collector-emitter voltage (VCEO) of 60 V and a collector-base voltage (VCBO) of 60 V, with an emitter-base voltage (VEBO) rating of 5 V. Power dissipation is rated at 600 mW. The operational temperature range spans from -65°C to +175°C. DC current gain (hFE) ranges from a minimum of 40 to a maximum of 300, measured at specific test conditions.
Feature Summary
- Dual configuration integrating two PNP transistors within a single hermetic package
- High-temperature operation capability up to 175°C for demanding environments
- Radiation-hardened design suitable for aerospace and military applications
Applications
- Military avionics systems requiring radiation tolerance
- Spacecraft electronic circuits
- High-reliability analog signal processing
Procurement Notes
Verify the specific suffix 'A' against the manufacturer's datasheet to confirm exact binning or testing criteria. Ensure procurement channels provide valid traceability documentation required for defense contracts. Confirm RoHS status as non-compliant due to the JANS/JAN classification. Validate that the TO-78-6 package matches the PCB footprint requirements before ordering.
Selection Notes
Select this component when dual PNP switching or amplification is required in high-radiation environments. Compare power dissipation ratings against thermal management capabilities. Verify hFE gain bands match circuit biasing needs. Consider the TO-78-6 package constraints for board layout. Evaluate alternatives only if radiation hardness is not a strict requirement.
Part Context
This part belongs to the JAN series of radiation-hardened semiconductors produced by Microchip. These components are specifically processed to withstand ionizing radiation effects common in space and nuclear environments. The JAN2N5796A serves as a ruggedized alternative to commercial-grade transistors, ensuring reliability in critical defense and aerospace missions where standard parts would fail.
Replacement Considerations
JANTX2N5796A
FAQ
What is the maximum operating temperature for the JAN2N5796A?
The maximum operating temperature is +175°C.
Does the JAN2N5796A support surface mount installation?
No, it is designed for through-hole mounting in a TO-78-6 package.
What is the typical application environment for this transistor?
It is intended for military, aerospace, and space applications requiring radiation hardness.
