JAN2N5796U

$93.92

Description：TRANS 2PNP DUAL 60V 600MA 6-SMD
Series：-

SKU:9f62fea07414 Category: Bipolar Transistor Arrays Brand: Microchip Technology

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：TRANS 2PNP DUAL 60V 600MA 6-SMD
Series：-
Mfr：Microchip Technology
Package：Bulk
Transistor Type：2 PNP (Dual)
Current - Collector (Ic) (Max)：600mA
Voltage - Collector Emitter Breakdown (Max)：60V
Vce Saturation (Max) @ Ib, Ic：1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)：10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 10V
Power - Max：600mW
Frequency - Transition：-
Operating Temperature：-65°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-SMD, No Lead
Supplier Device Package：6-SMD
Grade：Military
Qualification：MIL-PRF-19500/496

Download product information

JAN2N5796U

Overview

The JAN2N5796U is a dual PNP small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It utilizes silicon technology and is designed for surface-mount or surface-mount-compatible applications. The device features a maximum collector-emitter voltage of 60 V, a collector-base voltage of 60 V, and an emitter-base voltage of 5 V. Power dissipation is rated at 5 W. The component operates within a temperature range from -65 °C to +175 °C. Maximum DC current gain is specified as 300 at 150 mA and 10 V. Collector-emitter saturation voltage is 1.6 V.

Feature Summary

Dual configuration integrating two PNP transistors in a single package
High power dissipation capability suitable for demanding thermal environments
Extended operating temperature range supporting extreme conditions

Applications

Military aerospace electronic systems
High-reliability signal processing circuits
Harsh environment switching applications

Procurement Notes

Verify the specific suffix and manufacturer documentation to confirm compliance with military standards. Ensure that the ordering information matches the required radiation hardness and quality level specifications. Cross-reference datasheets to validate pinout compatibility and electrical parameters before integration into final designs.

Selection Notes

Select this component when dual PNP configurations are required in high-power or extreme temperature scenarios. Compare against standard commercial variants to ensure adequate margin for voltage and thermal constraints. Verify package compatibility with existing board layouts and mounting requirements.

Part Context

This part belongs to the JAN series of dual small-signal BJTs produced by Microchip Technology. It shares functional similarities with other JAN-series devices but offers specific voltage and power ratings tailored for ruggedized applications. The dual configuration allows for compact circuit design in space-constrained environments.