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The JAN2N6987 is a power bipolar junction transistor (BJT) array manufactured by Microchip Technology. It consists of four separate PNP silicon switching transistors housed in a 14-pin ceramic glass-sealed CERDIP package. The device supports a maximum collector current of 0.6 A and a collector-emitter breakdown voltage of 60 V. Designed for high-reliability applications, it operates within a junction temperature range of -65°C to +200°C. The component meets MIL-PRF-19500/558 standards, ensuring performance in demanding environments.
Verify the specific revision level and lot traceability documentation upon receipt. Ensure storage conditions maintain the hermetic seal integrity. Confirm that the ordering suffix matches the required pinout and qualification standard. Request test data if the application demands strict parameter limits beyond the datasheet minimums.
Select this component when a quad PNP array is required in a hermetic ceramic package. Compare against JAN2N6987U/TR for surface mount alternatives. Evaluate thermal dissipation requirements against the 1.5W power rating. Ensure the 60V voltage rating exceeds the peak circuit voltages.
This part belongs to the 2N6987 family of military-grade quadruple PNP transistors. It shares functional similarities with the JAN2N6989 but differs in polarity and voltage ratings. The CERDIP package distinguishes it from plastic or leadless surface mount variants in the same product line.
JAN2N6987U/TR offers a surface mount equivalent. Verify pin compatibility and thermal characteristics before substitution.