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Product Detailed Parameters
- Description：TRANS 4PNP QUAD 50V 800MA 6-SMD
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR)
- Transistor Type：4 PNP (Quad)
- Current - Collector (Ic) (Max)：800mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Vce Saturation (Max) @ Ib, Ic：1V @ 50mA, 500mA
- Current - Collector Cutoff (Max)：10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 10V
- Power - Max：1W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, No Lead
- Supplier Device Package：6-SMD
- Grade：Military
- Qualification：MIL-PRF-19500/559
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Overview
The JAN2N6989U/TR is a quad PNP bipolar junction transistor (BJT) array manufactured by Microchip Technology. It features four independent PNP transistors housed in a 6-SMD, no-lead surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 800mA per transistor. The device has a maximum power dissipation of 1W and supports a junction temperature range from -65°C to +200°C. It meets the MIL-PRF-19500/559 military qualification standard.
Feature Summary
- Military-grade reliability compliant with MIL-PRF-19500/559 standards
- Quad configuration integrating four independent PNP transistors
- Extended thermal performance supporting high junction temperatures up to 200°C
- Surface-mount design for automated assembly processes
Applications
- Military aerospace electronic systems
- High-reliability industrial control circuits
- Harsh environment signal processing applications
Procurement Notes
Verify component authenticity through authorized Microchip distributors or certified suppliers. Confirm that the delivered parts match the JAN2N6989U/TR designation and possess valid traceability documentation required for military procurement. Ensure storage conditions adhere to moisture sensitivity level guidelines to maintain solderability prior to assembly.
Selection Notes
Select this component when a quad PNP configuration is required for space-constrained surface-mount designs. It serves as a direct functional alternative to the through-hole 2N6989 variant where leaded packages are unsuitable. Consider the 1W power dissipation limit and 50V voltage rating during circuit design to ensure operation within safe limits under all expected load conditions.
Part Context
This part belongs to the 2N6989 family of quad transistor arrays produced by Microchip Technology. While the standard 2N6989 utilizes a TO-116 through-hole package, the JAN2N6989U/TR adapts the same internal die structure into a compact 6-SMD form factor. This variation maintains the core electrical characteristics while enabling surface-mount technology integration for modern PCB layouts.
Replacement Considerations
- JAN2N6989
FAQ
What is the DC current gain specification for this device?
The minimum DC current gain (hFE) is specified as 100 at a collector current of 150mA and a collector-emitter voltage of 10V.
Is this component RoHS compliant?
Yes, the JAN2N6989U/TR is RoHS3 compliant according to manufacturer documentation.
What is the maximum collector cutoff current?
The maximum collector cutoff current (ICBO) is specified as 10nA.
