JAN2N6989U

Overview

The JAN2N6989U is a military-grade silicon NPN quad small-signal bipolar junction transistor (BJT) array manufactured by Microchip Technology. It integrates four independent NPN transistors within a single LCC-20 surface-mount package, designed for high-reliability applications. The device supports a maximum collector current of 800 mA and a collector-emitter breakdown voltage of 50 V. Key electrical characteristics include a minimum DC current gain of 30 at 500 mA and 10 V, with a maximum power dissipation of 1 W. It operates across an extended temperature range from -65°C to +200°C and complies with MIL-PRF-19500/559 standards.

Feature Summary

• Military qualification compliant with MIL-PRF-19500/559 for enhanced reliability in harsh environments
• Quad configuration integrating four NPN transistors into a compact LCC-20 surface-mount footprint
• Extended thermal performance supporting junction temperatures up to 200°C

Applications

• High-reliability aerospace and defense electronic systems
• Harsh environment switching circuits requiring wide temperature tolerance
• Military-grade signal processing and amplification arrays

Procurement Notes

Verify the specific ordering suffix when purchasing, as variations such as /TR indicate tape-and-reel packaging which may differ in handling requirements compared to bulk units. Confirm that the component meets the required MIL-PRF-19500/559 qualification level for your specific application. Ensure compatibility with RoHS regulations if applicable, as military variants often carry exemptions. Validate the package type against your PCB design specifications before finalizing orders.

Selection Notes

Select the JAN2N6989U when a quad NPN configuration is required for space-constrained military designs. Compare its 800 mA continuous collector current capability against alternative discrete transistors to determine if a single integrated unit reduces board area. Consider the LCC-20 package dimensions for thermal management strategies, given the 1 W power dissipation limit. Evaluate the 50 V breakdown voltage against circuit peak voltages to ensure adequate safety margins.

Part Context

This component belongs to the 2N6989 family of quad NPN silicon switching transistors produced by Microchip Technology. It serves as the qualified military version of the commercial 2N6989, offering stricter parameter controls and radiation hardness attributes. The series is commonly used in legacy and modern defense electronics where standard commercial parts are insufficient for environmental durability.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult Microchip official cross-reference guides or engineering change notices for verified alternatives.