JANKCA2N2919

$69.45

Description：TRANS 2PNP 60V 50MA TO-78-6
Series：-

SKU:04bc02c65aba Category: Bipolar Transistor Arrays Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：TRANS 2PNP 60V 50MA TO-78-6
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR)
Transistor Type：2 PNP (Dual)
Current - Collector (Ic) (Max)：50mA
Voltage - Collector Emitter Breakdown (Max)：60V
Vce Saturation (Max) @ Ib, Ic：300mV @ 100µA, 1mA
Current - Collector Cutoff (Max)：10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 1mA, 5V
Power - Max：350mW
Frequency - Transition：-
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-78-6 Metal Can
Supplier Device Package：TO-78-6
Grade：Military
Qualification：MIL-PRF-19500/355

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JANKCA2N2919

Overview

The JANKCA2N2919 is a dual NPN bipolar junction transistor (BJT) array manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 60V and a continuous collector current of 50mA. The device dissipates up to 350mW of power and operates within a junction temperature range of -65°C to 200°C. Packaged in a TO-78-6 metal can for through-hole mounting, it meets MIL-PRF-19500/355 military qualification standards. DC current gain is specified at a minimum of 300 under standard test conditions.

Feature Summary

Military-grade reliability compliant with MIL-PRF-19500/355 specifications
Dual NPN configuration integrated into a single TO-78-6 metal can package
Extended high-temperature operation capability up to 200°C junction temperature

Applications

High-reliability aerospace avionics systems
Military communication equipment requiring ruggedized discrete components
Industrial control circuits operating in extreme thermal environments

Procurement Notes

Verify the specific suffix against official Microchip documentation to confirm exact binning or testing variations. Confirm that the TO-78-6 lead frame matches the target PCB footprint requirements. Ensure procurement channels provide traceability certificates required for defense or aerospace contracts.

Selection Notes

Select this component when a dual NPN topology is required in a hermetically sealed metal package. Compare the 60V breakdown voltage against circuit peak transient levels. Evaluate the 50mA current limit against load requirements to ensure adequate margin for switching applications.

Part Context

This part belongs to the 2N2919 series of dual NPN transistors produced by Microchip Technology. It serves as a specialized replacement for legacy military-specification discrete arrays. The TO-78-6 package provides superior thermal dissipation compared to plastic equivalents.