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JANS1N5309UR-1/TR is listed in the Current Regulation - Diodes, Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE CUR REG 100V 3.3MA 500MW. Review the specifications below when checking this part for your BOM.
The JANS1N5309UR-1/TR is a current regulator diode manufactured by Microchip Technology, designed for high-reliability aerospace and defense applications. It operates within a peak working voltage of 100V and provides a regulated current of 3.3mA with a maximum power dissipation of 500mW. The device features a low voltage drop of approximately 2.25V and utilizes the DO-213AB (MELF) surface-mount package. It supports an extended operating temperature range from -65°C to +175°C junction temperature and complies with MIL-PRF-19500/463 standards.
Verify that the specific ordering suffix matches the required radiation hardness level and packaging format. Confirm compliance with relevant military specifications and quality assurance requirements before procurement. Ensure compatibility with existing supply chain protocols for controlled components.
Select this component when radiation tolerance and high-temperature operation are critical. Compare against standard commercial grades if environmental constraints allow. Verify package dimensions and thermal characteristics against PCB layout requirements.
This part belongs to the 1N5309 series of current regulator diodes. It shares electrical characteristics with commercial variants but includes enhanced manufacturing controls and testing for harsh environments. The UR-1 suffix indicates the specific MELF package configuration.
Direct substitutes include other JANS-level current regulators from qualified manufacturers. Verify equivalent radiation hardness levels and package compatibility. Cross-reference with MIL-PRF-19500/463 approved alternatives.
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