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The JANS2N2920U/TR is a single NPN small-signal bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-78-6 hermetic package designed for surface mount or through-hole installation. The device supports a maximum collector-emitter voltage of 60 V and a collector-base voltage of 70 V, with an emitter-base voltage rating of 6 V. It handles a continuous collector current of 30 mA and dissipates up to 350 mW of power. The component operates within a temperature range of -65°C to +200°C and features a DC current gain (hFE) ranging from a minimum of 175 to a maximum of 600.
Verify the specific ordering suffix and manufacturer lot codes against official Microchip documentation prior to procurement. Ensure that the component meets all required radiation hardness and quality assurance standards for the intended mission profile. Confirm package integrity and pin compatibility during incoming inspection.
Select this component when a high-gain NPN transistor with hermetic sealing is required for extreme temperature applications. Compare the 60 V collector-emitter voltage and 30 mA current limits against circuit requirements. Verify that the TO-78-6 footprint matches the design layout constraints.
This part belongs to the JANS series of space-grade discrete semiconductors produced by Microchip Technology. These components are engineered to withstand the rigorous environmental conditions found in aerospace and defense applications, including vacuum, thermal cycling, and radiation exposure.
Consult official Microchip cross-reference documents for verified equivalent parts. Do not substitute with commercial grade alternatives without validating radiation tolerance and hermetic seal specifications.