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Product Detailed Parameters
- Description：TRANS 2PNP 60V 50MA TO-78-6
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：50mA
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 1mA, 5V
- Power - Max：350mW
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-78-6 Metal Can
- Supplier Device Package：TO-78-6
- Grade：Military
- Qualification：MIL-PRF-19500/336
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Overview
The JANS2N3810 is a dual PNP small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 60V and a maximum DC collector current of 50mA. The device has a power dissipation rating of 350mW and operates within a temperature range of -65°C to +200°C. It utilizes a TO-78-6 metal can package for through-hole mounting. The component is qualified to MIL-PRF-19500/336 standards, ensuring high reliability for demanding environments.
Feature Summary
- Hermetically sealed construction in a TO-78 metal can package
- Qualified to MIL-PRF-19500/336 military specifications
- Dual PNP configuration with matched characteristics
- Extended operating temperature range up to +200°C
Applications
- Military aerospace electronic systems
- High-reliability analog signal processing
- Harsh environment switching applications
Procurement Notes
Verify the specific suffix requirements against the design specification, as the base part number may have variations. Confirm that the procurement channel provides valid traceability documentation required for military-grade components. Ensure compliance with export control regulations associated with this qualification level before finalizing orders.
Selection Notes
Select this component when hermetic sealing and extended temperature operation are mandatory. Compare the 60V breakdown voltage and 50mA current limits against circuit requirements. Consider the TO-78-6 package constraints for board layout. Verify that the dual PNP configuration meets the specific circuit topology needs without requiring additional discrete transistors.
Part Context
This component belongs to the 2N3810 series of dual PNP silicon transistors. It shares core electrical parameters with commercial variants but differs in manufacturing processes and testing protocols. The JANS suffix indicates space-grade screening and qualification under strict military standards, distinguishing it from standard industrial or commercial equivalents.
Replacement Considerations
- JANTXV2N3810U
- JAN2N3810U
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is +200°C.
Does the JANS2N3810 require hermetic packaging?
Yes, it is housed in a hermetically sealed TO-78 metal can package.
What is the DC current gain range?
The DC current gain (hFE) ranges from a minimum of 150 to a maximum of 450 at 100 µA and 5 VDC.
