SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The JANS2N3810U/TR is a dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a PNP configuration housed in a SQ surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 60 V, a maximum collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. The device supports a maximum DC collector current of 50 mA with a power dissipation rating of 350 mW. It operates within a temperature range of -65°C to +200°C.
Verify the specific ordering suffix and revision level directly with Microchip Technology or authorized distributors before procurement. Confirm that the component meets the required MIL-PRF-19500 quality standards and radiation tolerance levels for the intended mission profile. Ensure proper handling procedures are followed due to the sensitive nature of space-grade semiconductor devices.
Select this component when a compact dual PNP solution is required for harsh environments. Compare the 60 V breakdown voltage and 50 mA current limits against circuit requirements. Consider the SQ package dimensions for PCB layout constraints. Verify thermal management capabilities given the 350 mW dissipation limit at elevated temperatures.
This part belongs to the JANS series of radiation-hardened semiconductors from Microchip Technology. The JANS designation indicates a specific level of screening and qualification for space applications. It is part of a broader portfolio of discrete components designed to withstand the extreme conditions found in orbital environments.
Direct replacements must match the JANS radiation-hardened specification. Standard commercial equivalents like the 2N3810 lack the necessary environmental qualifications. Consult Microchip for updated versions or cross-reference with other JANS-series dual BJTs if pinout compatibility is critical.