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Product Detailed Parameters
- Description：TRANS 2NPN DUAL 40V 600MA UC
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：600mA
- Voltage - Collector Emitter Breakdown (Max)：40V
- Vce Saturation (Max) @ Ib, Ic：900mV @ 30mA, 300mA
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 10V
- Power - Max：600mW
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, No Lead
- Supplier Device Package：UC
- Grade：Military
- Qualification：MIL-PRF-19500/495
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Overview
The JANS2N5794UC/TR is a dual small-signal NPN bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is designed for surface-mount installation in an SMD/SMT configuration. The device features a maximum collector-emitter voltage of 40 V, a collector-base voltage of 75 V, and an emitter-base voltage of 6 V. It supports a continuous collector current of 600 mA with a power dissipation rating of 600 mW. The component operates within a temperature range from -65°C to +200°C and offers a maximum DC current gain of 300 at 150 mA and 10 V.
Feature Summary
- Dual small-signal NPN configuration for compact circuit integration
- Extended high-temperature operation capability up to 200°C
- Silicon-based construction for reliable performance
Applications
- High-reliability aerospace electronic systems
- Military-grade signal processing circuits
- Harsh environment switching applications
Procurement Notes
Verify the specific suffix 'UC' against official Microchip documentation to confirm package and qualification details, as standard listings may reference 'U'. Ensure compliance with relevant military or aerospace standards required for the intended application. Confirm availability through authorized channels due to potential long lead times associated with specialized semiconductor components.
Selection Notes
Select this component when a dual NPN BJT with high thermal stability is required. The 600 mA current capacity and 600 mW power dissipation suit low-power signal applications. Verify that the 40 V collector-emitter voltage meets the circuit requirements. Consider the extended operating temperature range for environments exceeding standard commercial limits.
Part Context
This part belongs to the Microchip (formerly Microsemi) JANS series, which typically denotes radiation-hardened or high-reliability variants. The '2N5794' designation references a historical transistor type adapted for modern surface-mount packaging. The 'TR' suffix indicates tape and reel packaging for automated assembly processes.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided data. Consult Microchip technical support for qualified alternatives that match the JANS series reliability standards and electrical specifications.
