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The JANS2N5796U/TR is a dual PNP small-signal bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is designed for surface-mount installation in an SMD/SMT configuration. The device features a maximum collector-emitter voltage (VCEO) of 60 V and a collector-base voltage (VCBO) of 60 V, with an emitter-base voltage (VEBO) rating of 5 V. Power dissipation capability is specified at 5 W. The component operates within a temperature range from -65°C to +175°C. DC current gain (hFE) reaches a maximum of 300 at 150 mA and 10 V, while the collector-emitter saturation voltage is 1.6 V.
Verify the specific ordering suffix and manufacturer documentation to confirm compliance with required military or aerospace standards. Ensure that the procurement channel provides valid traceability records for the JANS2N5796U/TR part number. Confirm that the received components match the specified dual PNP configuration and packaging format before integration into critical systems.
Select this component when a dual PNP small-signal BJT with high power handling is required for surface-mount applications. The 5 W dissipation rating distinguishes it from lower-power alternatives. Verify that the 60 V voltage ratings align with the circuit requirements. Consider the extended temperature range suitability for harsh environment deployments where standard commercial parts may fail.
This part belongs to the JANS series of radiation-hardened semiconductors produced by Microchip Technology. The JANS designation indicates qualification for space and military applications. As a dual PNP transistor, it serves as a compact solution for integrating multiple switching functions in constrained board spaces while maintaining high reliability under severe environmental conditions.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Microchip resources for qualified equivalents.