JANS2N5796U/TR

JANS2N5796U/TR

$388.48
  • Description:TRANS 2PNP DUAL 60V 600MA U
  • Series:-

SKU:ac532a12d4d5 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS 2PNP DUAL 60V 600MA U
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):600mA
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Power - Max:600mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, No Lead
  • Supplier Device Package:U
  • Grade:Military
  • Qualification:MIL-PRF-19500/496

Download product information

JANS2N5796U/TR

Overview

The JANS2N5796U/TR is a dual PNP small-signal bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is designed for surface-mount installation in an SMD/SMT configuration. The device features a maximum collector-emitter voltage (VCEO) of 60 V and a collector-base voltage (VCBO) of 60 V, with an emitter-base voltage (VEBO) rating of 5 V. Power dissipation capability is specified at 5 W. The component operates within a temperature range from -65°C to +175°C. DC current gain (hFE) reaches a maximum of 300 at 150 mA and 10 V, while the collector-emitter saturation voltage is 1.6 V.

Feature Summary

  • Dual PNP configuration integrated into a single surface-mount package
  • High power dissipation rating of 5 W for robust thermal performance
  • Extended operating temperature range supporting extreme environments up to +175°C
  • Silicon-based construction ensuring stable small-signal switching characteristics

Applications

  • Military aerospace electronic systems requiring radiation-hardened components
  • High-reliability communication equipment operating in extreme temperatures
  • Aviation control circuits demanding high power dissipation capabilities

Procurement Notes

Verify the specific ordering suffix and manufacturer documentation to confirm compliance with required military or aerospace standards. Ensure that the procurement channel provides valid traceability records for the JANS2N5796U/TR part number. Confirm that the received components match the specified dual PNP configuration and packaging format before integration into critical systems.

Selection Notes

Select this component when a dual PNP small-signal BJT with high power handling is required for surface-mount applications. The 5 W dissipation rating distinguishes it from lower-power alternatives. Verify that the 60 V voltage ratings align with the circuit requirements. Consider the extended temperature range suitability for harsh environment deployments where standard commercial parts may fail.

Part Context

This part belongs to the JANS series of radiation-hardened semiconductors produced by Microchip Technology. The JANS designation indicates qualification for space and military applications. As a dual PNP transistor, it serves as a compact solution for integrating multiple switching functions in constrained board spaces while maintaining high reliability under severe environmental conditions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Microchip resources for qualified equivalents.

JANS2N5796U/TRJANS2N5796U/TR
$388.48
Buy Now