JANS2N5796UC/TR

Overview

The JANS2N5796UC/TR is a dual PNP small-signal bipolar junction transistor manufactured by Microchip Technology. Constructed using silicon technology, this component is designed for surface-mount installation in an LCC-6 package. It features a maximum collector-emitter voltage of 60 V and a collector-base voltage of 60 V, with an emitter-base voltage rating of 5 V. The device supports a power dissipation of 5 W and operates within a temperature range of -65°C to +175°C. Key electrical characteristics include a collector-emitter saturation voltage of 1.6 V and a maximum DC current gain (hFE) of 300 at 150 mA and 10 V.

Feature Summary

• Dual PNP configuration integrated into a single surface-mount package
• High thermal stability supporting operation up to +175°C
• Silicon-based construction for reliable small-signal switching

Applications

• Military aerospace electronic systems
• High-reliability signal processing circuits
• Harsh environment control logic

Procurement Notes

Verify the specific suffix 'UC' against official Microchip documentation to confirm package and qualification details, as standard listings may reference 'U'. Ensure compliance with relevant military or high-reliability standards required for the intended application before procurement.

Selection Notes

Select this component when a dual PNP configuration is required for space-constrained designs. The 60 V rating and 5 W dissipation capability suit moderate-power switching applications. Verify that the LCC-6 footprint aligns with the PCB layout requirements.

Part Context

This part belongs to the JANS series of radiation-hardened and high-reliability semiconductors produced by Microchip. These components are typically utilized in defense and aerospace sectors where standard commercial parts cannot withstand extreme environmental conditions or radiation exposure.

Replacement Considerations

Cross-reference with JAN2N5796 variants. Confirm pinout compatibility and thermal resistance values before substituting.