JANS2N6989U

Overview

The JANS2N6989U is a quad NPN bipolar junction transistor (BJT) array manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 50V and a continuous collector current of 800mA. The device has a maximum power dissipation of 1.5W and operates within a junction temperature range of -65°C to 200°C. It utilizes a surface-mount 6-SMD, no-lead package and meets MIL-PRF-19500/559 qualification standards.

Feature Summary

• Military-grade reliability with radiation hardening capabilities
• Quad configuration integrating four NPN transistors in a single package
• Extended thermal performance supporting high junction temperatures up to 200°C

Applications

• Radiation-hardened aerospace systems
• High-reliability military electronics
• Spacecraft control circuits

Procurement Notes

Verify the specific ordering suffix and manufacturer lot codes against the official Microchip datasheet to ensure compliance with MIL-PRF-19500/559 requirements. Confirm that the component matches the intended radiation tolerance specifications for the target application environment before finalizing procurement.

Selection Notes

Select this component when a radiation-tolerant quad NPN array is required for harsh environments. Ensure the design accommodates the 6-SMD package dimensions and the 1.5W power dissipation limits under expected operating conditions. Verify compatibility with existing board layouts requiring this specific footprint.

Part Context

This part belongs to the 2N6989 family of quad BJT arrays. The JANS prefix indicates a specific military/aerospace variant with enhanced screening and radiation hardness compared to commercial equivalents. It serves as a specialized discrete solution for high-reliability switching and amplification tasks.

Replacement Considerations

Direct substitutes include JAN2N6989U and JAN2N6989U/TR. Verify pinout compatibility and electrical parameter tolerances before substitution.