JANSD2N2906AL

Single Bipolar Transistors Overview

The JANSD2N2906AL is a radiation-hardened PNP silicon switching transistor manufactured by Microchip Technology. It is qualified to the JANS level under MIL-PRF-19500/291, providing high reliability for demanding environments. The device features a maximum collector current of 0.6 A and a collector-emitter breakdown voltage of 40 V. It is housed in a hermetically sealed metal TO-206AA (TO-5) package with three pins. The component is designed to withstand total ionizing dose radiation levels up to 10 kRads(Si), ensuring stable operation in space and military applications.

Single Bipolar Transistors Feature Summary

• Radiation hardened to withstand 10 kRads(Si) total ionizing dose
• Qualified per MIL-PRF-19500/291 for high-reliability use
• Hermetically sealed metal cylindrical package

Single Bipolar Transistors Applications

• Spacecraft avionics systems
• Military communication equipment
• High-reliability switching circuits

Single Bipolar Transistors Procurement Notes

Verify export compliance requirements as this product may require additional documentation for shipment from the United States. Confirm that the specific JANS qualification level meets project radiation tolerance specifications. Ensure the TO-206AA package style aligns with existing board layout constraints. Validate that the 40V rating is sufficient for the target circuit design.

Single Bipolar Transistors Selection Notes

Select this component when a PNP switching transistor requires proven radiation hardness for space or defense missions. Compare against other JANS levels such as JANSL for higher radiation tolerance if necessary. Consider the thermal management capabilities of the metal case package. Verify compatibility with driving logic levels given the standard bipolar characteristics.

Single Bipolar Transistors Part Context

This part belongs to the 2N2906A family of radiation-hardened transistors produced by Microchip Technology. The family includes variants with different radiation hardness levels, such as JANSM, JANSD, JANSP, and JANSL. These devices share similar electrical characteristics but differ in their ability to withstand ionizing radiation doses. The JANSD variant specifically targets applications requiring moderate radiation hardness.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.