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The JANSD2N3810 is a dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It utilizes silicon technology and features a PNP configuration housed in an SQ SMT package. The device supports a maximum DC collector current of 50 mA and withstands a collector-emitter voltage of 60 V. Power dissipation is rated at 350 mW, with an operating temperature range spanning from -65 °C to +200 °C.
Verify the specific suffix against official Microchip documentation to confirm radiation hardness levels and screening standards. Ensure the SQ SMT package variant matches the target PCB footprint requirements. Confirm availability status directly with authorized distributors as supply constraints may apply to this specialized component class.
Select this component when radiation tolerance and hermetic sealing are mandatory for the application. Compare the 50 mA current rating and 60 V voltage limits against circuit demands. Evaluate the SQ SMT package dimensions against board space constraints while ensuring thermal management supports the 350 mW dissipation capability.
This part belongs to the 2N3810 series of dual PNP transistors. It represents a specialized, radiation-hardened variant distinct from commercial equivalents. The designation indicates adherence to strict MIL-PRF-19500 standards for space and defense applications requiring long-term stability under ionizing radiation exposure.
Direct replacements include JAN2N3810 or JANTXV2N3810U/TR for equivalent electrical performance. Verify that substitute parts meet the same radiation hardness and hermetic sealing specifications required by the design.