JANSD2N3810L

Overview

The JANSD2N3810L is a dual PNP silicon small-signal bipolar junction transistor manufactured by Microchip Technology. It utilizes a hermetically sealed TO-78 metal can package with six leads, designed for through-hole mounting. The device features a maximum collector-emitter voltage of 60 V and a maximum collector-base voltage of 60 V. The emitter-base breakdown voltage is rated at 5 V. Maximum DC collector current is specified at 50 mA, with a power dissipation capacity of 350 mW. The component operates within an extended temperature range from -65°C to +200°C. It belongs to the 2N3810 series and meets JANS level radiation hardness requirements.

Feature Summary

• Hermetically sealed TO-78 metal can construction
• JANS level radiation hardness qualification
• Dual PNP configuration in single package
• Extended high-temperature operation capability

Applications

• Radiation-hardened analog signal processing
• Military aerospace circuitry
• High-reliability switching applications

Procurement Notes

Verify the specific manufacturing lot date code and radiation test certificates upon receipt. Confirm that the supplier provides traceability documentation required for JANS level components. Ensure proper handling procedures are followed due to the hermetic metal can packaging. Validate pinout compatibility with existing PCB footprints before assembly.

Selection Notes

Select this component when radiation tolerance and high-temperature stability are critical design constraints. Compare the 350 mW power dissipation limit against thermal management capabilities in the target enclosure. Verify that the 60 V voltage ratings exceed peak circuit transients. Consider the TO-78 package dimensions for mechanical integration.

Part Context

This part is a specialized variant within the broader 2N3810 family, distinguished by its JANS radiation hardening level. While standard commercial versions exist, the JANSD suffix indicates specific screening and processing per MIL-PRF-19500 standards. It serves as a direct replacement for other JANS-rated dual PNP transistors in legacy military designs requiring proven reliability.

Replacement Considerations

Direct substitutes include other JANS-rated dual PNP transistors from qualified manufacturers such as Semicoa or BAE Systems. Verify equivalent radiation hardness levels and pinout compatibility. Standard commercial 2N3810 equivalents lack the necessary radiation tolerance for this application.