JANSD2N3810U/TR

JANSD2N3810U/TR

$291.44
  • Description:TRANS 2PNP DUAL 60V 50MA 6-SMD
  • Series:-

SKU:7e34690d13a1 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS 2PNP DUAL 60V 50MA 6-SMD
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):50mA
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 1mA, 5V
  • Power - Max:350mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, No Lead
  • Supplier Device Package:6-SMD
  • Grade:Military
  • Qualification:MIL-PRF-19500/336

Download product information

JANSD2N3810U/TR

Overview

The JANSD2N3810U/TR is a dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a silicon PNP configuration housed in a surface-mount SQ package. The device supports a maximum DC collector current of 50 mA and a collector-emitter voltage (VCEO) of 60 V. Power dissipation is rated at 350 mW, with an operating temperature range from -65°C to +200°C. This component is designed for high-reliability applications requiring robust performance under extreme thermal conditions.

Feature Summary

  • Dual PNP transistor configuration integrated into a single compact surface-mount package
  • Extended thermal stability suitable for operation up to 200°C junction temperature
  • High-voltage capability with 60 V collector-emitter breakdown rating

Applications

  • Military aerospace electronic systems
  • High-temperature industrial control circuits
  • Ruggedized signal processing interfaces

Procurement Notes

Verify the specific suffix designation against official Microchip documentation to confirm package type and reel specifications. Ensure that the procurement channel provides traceability certificates required for military-grade components. Confirm RoHS compliance status as indicated in manufacturer records prior to ordering.

Selection Notes

Select this component when a dual PNP BJT is required for surface-mount assembly in environments exceeding standard commercial temperature limits. Compare the 350 mW power dissipation and 60 V voltage ratings against circuit requirements. Ensure the SQ package footprint matches the PCB layout constraints for the target design.

Part Context

This part belongs to the 2N3810 series of dual small-signal transistors produced by Microchip Technology. The JAN prefix indicates a specific qualification level often associated with military or space-grade reliability standards. The TR suffix typically denotes tape and reel packaging for automated surface-mount placement processes.

Replacement Considerations

Consult official Microchip substitution guides for verified equivalents. Generic replacements may not match the extended temperature range or specific military qualification requirements inherent to the JAN series designation.

JANSD2N3810U/TRJANSD2N3810U/TR
$291.44
Buy Now