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The JANSD2N3810U/TR is a dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a silicon PNP configuration housed in a surface-mount SQ package. The device supports a maximum DC collector current of 50 mA and a collector-emitter voltage (VCEO) of 60 V. Power dissipation is rated at 350 mW, with an operating temperature range from -65°C to +200°C. This component is designed for high-reliability applications requiring robust performance under extreme thermal conditions.
Verify the specific suffix designation against official Microchip documentation to confirm package type and reel specifications. Ensure that the procurement channel provides traceability certificates required for military-grade components. Confirm RoHS compliance status as indicated in manufacturer records prior to ordering.
Select this component when a dual PNP BJT is required for surface-mount assembly in environments exceeding standard commercial temperature limits. Compare the 350 mW power dissipation and 60 V voltage ratings against circuit requirements. Ensure the SQ package footprint matches the PCB layout constraints for the target design.
This part belongs to the 2N3810 series of dual small-signal transistors produced by Microchip Technology. The JAN prefix indicates a specific qualification level often associated with military or space-grade reliability standards. The TR suffix typically denotes tape and reel packaging for automated surface-mount placement processes.
Consult official Microchip substitution guides for verified equivalents. Generic replacements may not match the extended temperature range or specific military qualification requirements inherent to the JAN series designation.