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The JANSD2N3810U is a dual PNP small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a silicon construction and is housed in a Dual Small-Outline SQ surface-mount package. The device supports a maximum DC collector current of 50 mA and operates with a collector-emitter voltage (VCEO) of 60 V. Key electrical parameters include a collector-base voltage (VCBO) of 60 V, an emitter-base voltage (VEBO) of 5 V, and a power dissipation rating of 350 mW. The component functions within a temperature range from -65°C to +200°C.
Verify the specific suffix 'D' against official Microchip documentation to confirm package type and qualification level. Ensure compatibility with existing PCB footprints for the SQ SMT form factor. Confirm RoHS status and manufacturing origin requirements prior to ordering.
Select this component when a dual PNP configuration is required in a surface-mount format. Compare the 350 mW power dissipation limit against circuit thermal loads. Verify that the 60 V voltage ratings exceed peak operating conditions. Consider the SQ package dimensions for board layout constraints.
This part belongs to the 2N3810 series of dual PNP transistors produced by Microchip Technology. Variants within this series typically share core electrical characteristics but differ in packaging, such as through-hole TO-78 or surface-mount options, and qualification grades like JANS for aerospace use.
Cross-reference with other 2N3810 series variants from Microchip or equivalent manufacturers offering dual PNP SMT packages. Verify pinout compatibility and ensure replacement parts meet the same 60 V / 50 mA / 350 mW specifications.