JANSF2N2907AUB/TR

Single Bipolar Transistors Overview

The JANSF2N2907AUB/TR is a PNP small-signal bipolar junction transistor manufactured by Microchip Technology. It features a maximum collector current of 600 mA and a collector-emitter voltage rating of 60 V. The device is designed for surface mount applications in a hermetically sealed ceramic package, specifically the UBC configuration. It offers a total power dissipation capacity of 500 mW at 25°C ambient temperature. This component is classified as a radiation-hardened single-element silicon transistor intended for high-reliability environments.

Single Bipolar Transistors Feature Summary

• Hermetically sealed ceramic construction for enhanced environmental protection
• Radiation-hardened design suitable for demanding operational conditions
• Surface mount packaging optimized for automated assembly processes

Single Bipolar Transistors Applications

• Military electronic systems requiring high reliability
• Spacecraft avionics and satellite communication equipment
• High-reliability industrial control circuits

Single Bipolar Transistors Procurement Notes

Verify that the specific suffix indicates the tape and reel packaging format required for your manufacturing line. Confirm radiation hardness levels against mission-specific requirements. Ensure the ceramic package dimensions match your PCB footprint constraints. Check for any export control documentation requirements associated with this high-reliability component class before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when radiation tolerance and hermetic sealing are critical for system longevity. Compare against standard plastic packages if cost is a primary driver and harsh environments are not present. Evaluate thermal management needs given the 500 mW dissipation limit. Consider the surface mount form factor for space-constrained designs requiring robust physical connections.

Single Bipolar Transistors Part Context

This part belongs to the JANS family of radiation-hardened semiconductors produced by Microchip. It serves as a specialized variant of the general-purpose 2N2907A transistor, upgraded for aerospace and defense applications. The series provides reliable switching capabilities where standard commercial components would fail due to radiation exposure or environmental stress.

Single Bipolar Transistors Replacement Considerations

JANSF2N2907AUB