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The JANSF2N2920L is a dual NPN silicon small-signal transistor designed for high-reliability applications. It operates with a maximum collector-emitter voltage of 60 V and a maximum collector current of 30 mA. The device features a minimum DC current gain (hFE) of 300. It is housed in a TO-78 cylindrical metal package with six terminals, conforming to MIL-PRF-19500/355 specifications.
Verify the component's authenticity against the manufacturer's authorized distributor list. Confirm that the part meets the specific JANS level requirements for space-grade applications. Ensure compliance with relevant military specifications during acceptance testing.
Select this component when radiation tolerance and long-term stability are critical. Compare performance parameters such as leakage current and gain bandwidth against alternative space-grade transistors. Verify package compatibility with existing PCB layouts.
This part belongs to the Microchip Technology family of space-qualified discrete semiconductors. It shares design characteristics with other JANS-level devices intended for harsh environments. The series emphasizes robustness and consistent electrical performance over extended operational lifetimes.
Direct substitutes include other JANS-qualified dual NPN transistors meeting MIL-PRF-19500/355. Verify pinout and thermal characteristics before substitution.