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The JANSF2N3810U/TR is a dual PNP small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It operates with a maximum collector-emitter voltage of 60 V and a continuous collector current of 50 mA. The device dissipates up to 350 mW of power and functions within a temperature range of -65°C to +200°C. Packaged in an LCC-6 surface-mount configuration, it features a minimum DC current gain of 100 at 10 µA and 5 V. This component is designed for high-reliability applications requiring robust performance under extreme conditions.
Verify the specific ordering suffix and manufacturer documentation to confirm compliance with required military or aerospace standards. Ensure that the procurement channel provides valid traceability records. Confirm that the component meets all necessary environmental and quality certifications before integration into final assemblies.
Select this component when radiation tolerance and wide temperature operation are critical requirements. Compare electrical parameters such as current gain and saturation voltage against circuit demands. Ensure the LCC-6 package footprint aligns with the printed circuit board layout constraints and assembly capabilities.
This part belongs to the 2N3810 series of dual PNP transistors produced by Microchip Technology. It shares core electrical characteristics with other variants in the family but differs in packaging and qualification levels. The series is widely recognized for its reliability in demanding electronic applications.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing designs by cross-referencing pinouts and electrical specifications with alternative components from the same manufacturer.