JANSF2N3810U

Overview

The JANSF2N3810U is a dual small-signal PNP bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a silicon construction with a maximum collector-emitter voltage of 60V and a maximum collector current of 50mA. The device has a power dissipation rating of 350mW and operates within a temperature range of -65°C to +200°C. It utilizes an SQ surface-mount package configuration.

Feature Summary

• Radiation-hardened design suitable for space applications
• Dual PNP transistor configuration in a single package
• Extended operating temperature range up to 200°C

Applications

• Spacecraft electronic systems
• Military avionics circuits
• High-reliability signal processing

Procurement Notes

Verify the specific ordering suffix and manufacturer documentation to confirm radiation hardness levels and compliance requirements. Ensure compatibility with existing circuit designs regarding pinout and thermal management specifications before procurement.

Selection Notes

Select this component for applications requiring high reliability and radiation tolerance. Confirm that the 60V voltage rating and 50mA current capacity meet the circuit demands. Verify package compatibility with the intended PCB layout.

Part Context

This part belongs to the 2N3810 series of dual PNP transistors. It shares core electrical characteristics with standard variants but includes enhancements for harsh environments. The JANS prefix indicates a specific qualification level distinct from commercial or industrial grades.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data.