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The JANSL2N3810 is a dual PNP silicon small-signal bipolar junction transistor manufactured by Microchip Technology. It is housed in a hermetically sealed TO-78 metal can package with six leads, designed for through-hole mounting. The device features a maximum collector-emitter voltage of 60V and a maximum collector-base voltage of 60V. It supports a maximum DC collector current of 50mA with a power dissipation rating of 350mW. The component operates within an extended temperature range from -65°C to +200°C. This part belongs to the 2N3810 series and is classified as a high-reliability long-lead dual RH small-signal BJT.
Verify availability status directly with authorized distributors or the manufacturer, as supply may be restricted. Confirm that the specific ordering suffix matches the required reliability level. Ensure compliance with relevant export control regulations if applicable. Request official datasheets and quality certifications prior to finalizing procurement decisions.
Select this component when a dual PNP transistor with high thermal stability and hermetic sealing is required. Compare specifications against standard commercial equivalents if cost is a primary constraint. Verify that the TO-78-6 footprint fits the target PCB layout. Consider radiation hardness requirements if the application involves space environments.
This component is part of the broader 2N3810 family of dual PNP transistors produced by Microchip Technology. Variants such as the JAN2N3810 and 2N3810 share similar electrical characteristics but may differ in screening levels or packaging options. The JANSL2N3810 specifically denotes a high-reliability version intended for demanding operational conditions.
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate other variants within the 2N3810 series for potential compatibility based on pinout and electrical ratings.