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The JANSL2N3810L is a dual PNP silicon small-signal bipolar junction transistor manufactured by Microchip Technology. It utilizes a TO-78-6 hermetically sealed metal can package designed for through-hole mounting. The device supports a maximum DC collector current of 50 mA and withstands collector-emitter and collector-base voltages of 60 V each, with an emitter-base voltage rating of 5 V. Power dissipation is rated at 350 mW. The component operates within an extended temperature range from -65°C to +200°C, ensuring reliability in demanding environments.
Verify the specific JANSL suffix against the manufacturer's latest datasheet to confirm radiation hardness levels and screening standards. Confirm availability status as supply may be restricted or subject to long lead times due to specialized manufacturing processes. Ensure procurement channels are authorized to guarantee component authenticity and traceability for critical systems.
Select this component when radiation tolerance and high-temperature operation are mandatory requirements. Compare electrical parameters such as hFE gain and saturation voltage against circuit needs. Verify that the TO-78-6 package dimensions fit the mechanical constraints. Consider alternative radiation-hardened variants if specific screening levels differ from project specifications.
This part belongs to the 2N3810 series of dual PNP transistors produced by Microchip Technology. It shares core electrical characteristics with standard commercial versions but incorporates enhanced manufacturing controls. The JANSL designation indicates a specific military or space-grade qualification level distinct from standard industrial components.
Direct substitutes include JAN2N3810L and JANSL2N3810. Verify pinout compatibility and radiation hardness specifications before substitution. Standard commercial 2N3810 equivalents lack the required environmental sealing and radiation tolerance.