JANSR2N2920L

Overview

The JANSR2N2920L is a dual NPN small-signal bipolar junction transistor manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 60V and a continuous collector current rating of 30mA. The device has a total power dissipation capacity of 350mW. It is housed in a TO-78-6 metal can package designed for through-hole mounting. This component is classified as a radiation-hardened silicon BJT suitable for demanding electronic applications.

Feature Summary

• Dual NPN configuration within a single hermetically sealed metal can package
• Radiation-hardened design optimized for high-reliability environments
• Small-signal performance with 60V voltage and 30mA current ratings

Applications

• Aerospace electronic systems requiring radiation tolerance
• Military communication equipment signal processing
• Satellite payload circuitry and control modules

Procurement Notes

Verify the specific ordering suffix to ensure the correct radiation hardness level and testing standards are met for your mission requirements. Confirm that the TO-78-6 package dimensions align with your board layout constraints. Check for any required quality certification documentation from the manufacturer prior to final procurement approval.

Selection Notes

Select this component when radiation hardness is critical for system reliability. Ensure the 60V collector-emitter voltage exceeds the maximum operating voltage in your circuit. Verify that the 350mW power dissipation rating accommodates thermal conditions within the TO-78-6 package without exceeding junction temperature limits during operation.

Part Context

This part belongs to the JANS series of radiation-hardened semiconductors produced by Microchip Technology. These components are engineered to withstand ionizing radiation effects common in space and high-altitude environments. The JANSR2N2920L specifically provides dual NPN functionality in a robust metal can format.

Replacement Considerations

Direct replacements must match the JANS radiation hardness specification and TO-78-6 package. Generic commercial grade transistors are not suitable substitutes due to lack of radiation tolerance. Consult official substitution lists for verified equivalent parts with identical electrical and environmental ratings.