JANSR2N2920U/TR

Overview

The JANSR2N2920U/TR is a dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features an NPN configuration housed in a leadless chip carrier (LCC-6) surface-mount package. The device is rated for a maximum collector-emitter voltage of 60V and a continuous collector current of 30mA, with a total power dissipation capability of 350mW. This component is designed for high-reliability applications requiring radiation hardness.

Feature Summary

• Dual NPN small-signal BJT configuration
• Radiation-hardened design for harsh environments
• Surface-mount LCC-6 package

Applications

• Aerospace electronic systems
• Military communication equipment
• Satellite payload circuits

Procurement Notes

Verify the specific suffix 'TR' indicates tape-and-reel packaging when placing orders. Confirm that the radiation hardness specifications meet the mission requirements. Ensure the LCC-6 footprint matches the PCB layout. Check for updated datasheets regarding qualification standards before finalizing procurement.

Selection Notes

Select this component for designs requiring radiation tolerance in a compact surface-mount form factor. Compare against standard commercial parts if environmental shielding is present. Verify thermal management capabilities given the 350mW dissipation limit. Ensure compatibility with existing dual-transistor circuit topologies.

Part Context

This part belongs to the JANS series of radiation-hardened semiconductors from Microchip. It serves as a specialized variant of the standard 2N2920 transistor, enhanced for space and defense use. The series provides reliable switching and amplification in high-radiation environments where standard silicon devices would fail.

Replacement Considerations

• JANSR2N2920U