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The JANSR2N2920U is a radiation-hardened NPN silicon dual transistor array designed for surface-mount applications. It features two independent NPN transistors within a single small-outline package. The device supports a maximum collector-emitter breakdown voltage of 60V and a continuous collector current of 30mA. Power dissipation is rated at 350mW. This component is engineered to withstand high total ionizing dose (TID) levels, making it suitable for harsh environments.
Verify the specific ordering suffix and lot traceability requirements with the manufacturer or authorized distributors. Ensure that the procurement channel provides valid certification for radiation hardness qualification. Confirm that the delivered units match the exact part number specifications regarding package type and electrical parameters before integration into critical systems.
Select this component when radiation tolerance is a primary requirement for small-signal switching applications. The dual NPN structure allows for efficient circuit layout in space-constrained designs. Consider the 60V voltage rating and 30mA current limit to ensure compatibility with the target signal processing stages. Evaluate thermal management needs based on the 350mW dissipation rating in the chosen package.
This part belongs to Microchip's radiation-hardened small-signal bipolar transistor family. It serves as a specialized alternative to standard commercial-grade transistors in environments exposed to significant ionizing radiation. The dual configuration simplifies board space usage compared to discrete components while maintaining robust performance under extreme conditions.
Direct replacements must be verified against the official datasheet for equivalent radiation hardness levels. Standard commercial equivalents like the 2N2920 lack the necessary TID tolerance and are not suitable substitutes for qualified aerospace or military applications without rigorous testing.