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The JANSR2N3810U is a dual PNP small-signal bipolar junction transistor manufactured by Microchip Technology. It features silicon technology and is designed for surface mount applications in LCC-6 packages. The device supports a maximum continuous collector current of 50 mA, with collector-emitter and collector-base voltages rated at 60 V each. Emitter-base voltage withstands up to 5 V. Power dissipation capabilities range from 350 mW to 600 mW depending on configuration. Operating temperatures span from -65°C to +200°C, ensuring reliability in demanding environments.
Verify component authenticity through authorized Microchip distributors. Confirm radiation hardness level requirements match specific mission parameters. Check for updated datasheet revisions regarding electrical characteristics. Ensure storage conditions maintain integrity of the LCC-6 package. Validate ordering suffixes against current production status.
Select this component when radiation tolerance and high-temperature stability are critical. Compare power dissipation limits against thermal management capabilities. Evaluate package compatibility with existing PCB layouts. Consider alternative variants if standard commercial grades suffice. Verify voltage ratings align with circuit operating conditions.
Part of the 2N3810 series offering dual PNP transistors. Designed for specialized applications requiring robust performance. Manufactured using silicon planar technology. Provides reliable switching and amplification functions. Suitable for military and aerospace electronic systems.
JANS2N3810U serves as a bulk-pack equivalent variant. JAN2N3810U offers similar electrical characteristics in different packaging. Verify pinout compatibility before substitution. Confirm radiation hardening levels match application needs.