JANSR2N3810U

JANSR2N3810U

$207.04
  • Description:TRANS 2PNP DUAL 60V 50MA 6-SMD
  • Series:-

SKU:93c973b41e8e Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP DUAL 60V 50MA 6-SMD
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tray
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):50mA
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 100µA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 1mA, 5V
  • Power - Max:350mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, No Lead
  • Supplier Device Package:6-SMD
  • Grade:Military
  • Qualification:MIL-PRF-19500/336

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JANSR2N3810U

Overview

The JANSR2N3810U is a dual PNP small-signal bipolar junction transistor manufactured by Microchip Technology. It features silicon technology and is designed for surface mount applications in LCC-6 packages. The device supports a maximum continuous collector current of 50 mA, with collector-emitter and collector-base voltages rated at 60 V each. Emitter-base voltage withstands up to 5 V. Power dissipation capabilities range from 350 mW to 600 mW depending on configuration. Operating temperatures span from -65°C to +200°C, ensuring reliability in demanding environments.

Feature Summary

  • Dual PNP configuration within a single compact package
  • High temperature operation capability up to 200°C
  • Surface mount LCC-6 packaging for automated assembly
  • Radiation-hardened design specifications

Applications

  • Signal processing circuits requiring radiation resistance
  • Amplification stages in harsh environment electronics
  • Switching applications in aerospace systems

Procurement Notes

Verify component authenticity through authorized Microchip distributors. Confirm radiation hardness level requirements match specific mission parameters. Check for updated datasheet revisions regarding electrical characteristics. Ensure storage conditions maintain integrity of the LCC-6 package. Validate ordering suffixes against current production status.

Selection Notes

Select this component when radiation tolerance and high-temperature stability are critical. Compare power dissipation limits against thermal management capabilities. Evaluate package compatibility with existing PCB layouts. Consider alternative variants if standard commercial grades suffice. Verify voltage ratings align with circuit operating conditions.

Part Context

Part of the 2N3810 series offering dual PNP transistors. Designed for specialized applications requiring robust performance. Manufactured using silicon planar technology. Provides reliable switching and amplification functions. Suitable for military and aerospace electronic systems.

Replacement Considerations

JANS2N3810U serves as a bulk-pack equivalent variant. JAN2N3810U offers similar electrical characteristics in different packaging. Verify pinout compatibility before substitution. Confirm radiation hardening levels match application needs.

JANSR2N3810UJANSR2N3810U
$207.04
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