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JANSR2N7589U3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RH MOSFET 150V U3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for JANSR2N7589U3
- Description：RH MOSFET 150V U3
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：12V
- Rds On (Max) @ Id, Vgs：88mOhm @ 12A, 12V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：50 nC @ 12 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2140 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Military
- Qualification：MIL-STD-750
- Mounting Type：Surface Mount
- Supplier Device Package：U3 (SMD-0.5)
- Package / Case：3-SMD, No Lead
Single FETs, MOSFETs datasheet and documents for JANSR2N7589U3
Single FETs, MOSFETs Overview
The JANSR2N7589U3 is a radiation-hardened N-channel power MOSFET manufactured by Microchip Technology. It features a 150 V drain-source voltage rating and a continuous drain current of 19 A. The device is designed to withstand total ionizing dose (TID) radiation levels up to 100 krad (Si). This component serves as a primary switching element in power conversion circuits, including point-of-load converters, DC-DC converters, and motor control applications.
Single FETs, MOSFETs Feature Summary
- Radiation-hardened design for space environments
- High voltage and current handling capability
- Suitable for primary switching in power conversion
Single FETs, MOSFETs Applications
- Space converters
- Motor control systems
- Point-of-load converters
- DC-DC converters
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix and package type when procuring. Confirm radiation hardness specifications and datasheet revisions directly with Microchip Technology or authorized distributors. Ensure compliance with project-specific environmental requirements before finalizing orders.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring radiation tolerance in space-constrained designs. Evaluate thermal management needs due to power dissipation characteristics. Compare performance metrics against alternative rad-hard MOSFETs to ensure compatibility with existing circuit topologies and control signals.
Single FETs, MOSFETs Part Context
This part belongs to Microchip's radiation-hardened semiconductor portfolio, specifically targeting aerospace and defense markets. It complements other rad-hard components used in satellite and high-reliability electronic systems where standard commercial parts would fail under ionizing radiation exposure.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution lists for verified equivalents. Generic replacements may not match radiation hardness ratings. Verify pinout and electrical parameters before integrating substitute components into existing designs.
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