Diode Arrays JANTX1N5711UBD product image

JANTX1N5711UBD

$76.93
  • Description:DIODE ARRAY SCHOTTKY 50V 33MA UB
  • Series:-

SKU:45f8dd356588 Category: Brand:

  
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JANTX1N5711UBD is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY SCHOTTKY 50V 33MA UB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for JANTX1N5711UBD

  • Description:DIODE ARRAY SCHOTTKY 50V 33MA UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Diode Configuration:1 Pair Series Connection
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io) (per Diode):33mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:200 nA @ 50 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/444

Diode Arrays datasheet and documents for JANTX1N5711UBD

JANTX1N5711UBD

Diode Arrays Overview

The JANTX1N5711UBD is a silicon Schottky barrier diode manufactured by Microchip Technology. It features a maximum repetitive reverse voltage of 50 V and an average forward current rating of 33 mA DC. The device exhibits a forward voltage of 1 V at 15 mA and a reverse leakage current of 200 nA at 50 V. It operates within a junction temperature range of -65°C to +150°C. The component utilizes a 3-SMD, no-lead UB package with a capacitance of 2 pF at 0 V and 1 MHz.

Diode Arrays Feature Summary

  • Military-grade qualification compliant with MIL-PRF-19500/444 standards for high-reliability applications.
  • Ceramic encapsulation provides robust protection suitable for demanding environments.
  • Low turn-on voltage and ultrafast switching characteristics optimize signal detection efficiency.

Diode Arrays Applications

  • High-level UHF/VHF detection circuits
  • Pulse application systems requiring broad dynamic range
  • High-reliability military electronic assemblies

Diode Arrays Procurement Notes

Verify the specific revision level against the latest Microchip datasheet to ensure compliance with current manufacturing standards. Confirm that the UB surface-mount package aligns with the intended PCB footprint design. Check for any product change notifications regarding material composition or assembly site modifications prior to final procurement authorization.

Diode Arrays Selection Notes

Select this component when a ruggedized Schottky diode is required for harsh environments. The ceramic construction offers superior durability compared to standard plastic packages. Ensure the circuit design accommodates the 33 mA current limit and 50 V reverse voltage constraints. Verify thermal management requirements for operation near the upper temperature limit.

Diode Arrays Part Context

This part belongs to the 1N5711 series of small-signal Schottky diodes. It serves as the surface-mount equivalent to axial-leaded variants like the DO-35 package versions. The JANTX suffix indicates a specific military quality tier within the broader family of qualified Schottky barrier devices offered by the manufacturer.

Diode Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other manufacturers' MIL-PRF-19500/444 qualified Schottky diodes only after verifying exact electrical and mechanical parameter matches.

JANTX1N5711UBDJANTX1N5711UBD
$76.93
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