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JANTX1N5711UBD is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY SCHOTTKY 50V 33MA UB. Review the specifications below when checking this part for your BOM.
The JANTX1N5711UBD is a silicon Schottky barrier diode manufactured by Microchip Technology. It features a maximum repetitive reverse voltage of 50 V and an average forward current rating of 33 mA DC. The device exhibits a forward voltage of 1 V at 15 mA and a reverse leakage current of 200 nA at 50 V. It operates within a junction temperature range of -65°C to +150°C. The component utilizes a 3-SMD, no-lead UB package with a capacitance of 2 pF at 0 V and 1 MHz.
Verify the specific revision level against the latest Microchip datasheet to ensure compliance with current manufacturing standards. Confirm that the UB surface-mount package aligns with the intended PCB footprint design. Check for any product change notifications regarding material composition or assembly site modifications prior to final procurement authorization.
Select this component when a ruggedized Schottky diode is required for harsh environments. The ceramic construction offers superior durability compared to standard plastic packages. Ensure the circuit design accommodates the 33 mA current limit and 50 V reverse voltage constraints. Verify thermal management requirements for operation near the upper temperature limit.
This part belongs to the 1N5711 series of small-signal Schottky diodes. It serves as the surface-mount equivalent to axial-leaded variants like the DO-35 package versions. The JANTX suffix indicates a specific military quality tier within the broader family of qualified Schottky barrier devices offered by the manufacturer.
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other manufacturers' MIL-PRF-19500/444 qualified Schottky diodes only after verifying exact electrical and mechanical parameter matches.
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