SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The JANTX2N2920 is a silicon NPN single junction transistor manufactured by Microchip Technology. It is designed for general-purpose switching and amplification applications in harsh environments. The device features a maximum collector-emitter voltage of 60V, a maximum collector-base voltage of 70V, and an emitter-base voltage of 6V. It supports a continuous collector current of 30mA with a power dissipation rating of 350mW. The component operates within a temperature range of -65°C to +200°C and utilizes a TO-78-6 metal can package.
Verify the specific manufacturer lot traceability and radiation test reports required for your mission profile. Confirm that the TO-78-6 package dimensions match your PCB footprint or socket requirements. Ensure compliance with project-specific quality standards such as MIL-PRF-19500 when sourcing this component.
Select this part when a hermetically sealed NPN transistor with high-temperature capability is required. Compare the 30mA current limit against load requirements. Consider the TO-78-6 package constraints if surface-mount alternatives are preferred for automated assembly processes.
This component belongs to the JANTX series of radiation-hardened bipolar junction transistors produced by Microchip. The series provides enhanced reliability compared to commercial equivalents, specifically targeting aerospace and defense markets where standard silicon devices may fail under ionizing radiation exposure.
Direct replacements include other JANTX2N2920 variants from authorized manufacturers. Verify pinout compatibility and electrical parameter tolerances before substituting with non-JANTX qualified parts.