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The JANTX2N2920A is a JAN-class NPN silicon epitaxial planar transistor manufactured by Microchip Technology. It is designed for high-reliability applications requiring radiation hardness and extended temperature operation. The device features a collector-emitter voltage of 60 V, a collector-base voltage of 70 V, and an emitter-base voltage of 6 V. It supports a continuous collector current of 30 mA with a maximum power dissipation of 350 mW. The component operates within a junction temperature range of -65°C to +200°C and utilizes a TO-78-6 hermetic metal package.
Verify the specific JAN quality level and screening requirements against the official Microchip datasheet before procurement. Confirm that the TO-78-6 package dimensions match the design constraints. Ensure that the ordering suffix corresponds to the required lead time and packaging format. Request the certificate of compliance to validate the radiation hardness specifications.
Select this component when a hermetically sealed NPN transistor is required for extreme temperature environments. Compare the 350 mW power dissipation limit against the thermal resistance of the target heat sink. Verify that the 60 V collector-emitter rating exceeds the maximum circuit voltage. Consider the TO-78-6 footprint compatibility during the PCB layout phase.
This part belongs to the 2N2920 family of small-signal transistors produced under military specifications. The JANTX designation indicates a higher reliability tier than standard commercial variants. Microchip Technology continues production of these legacy parts to support long-term defense and space programs.
Direct replacements include the JAN2N2920A or other JANTX-series equivalents from authorized manufacturers. Verify pinout compatibility with the TO-78-6 configuration. Ensure that substitute parts meet the same radiation hardness and temperature range requirements.