JANTX2N2920U/TR

Overview

The JANTX2N2920U/TR is a single NPN silicon small-signal bipolar junction transistor manufactured by Microchip Technology. It features a TO-78-6 package with through-hole mounting. Key electrical ratings include a collector-emitter voltage of 60 V, a collector-base voltage of 70 V, and an emitter-base voltage of 6 V. The device supports a continuous collector current of 30 mA with a power dissipation of 350 mW. DC current gain ranges from a minimum of 175 to a maximum of 600. It operates within a temperature range of -65°C to +200°C.

Feature Summary

• High DC current gain suitable for sensitive signal amplification
• Extended high-temperature operation capability up to 200°C
• Rad-hardened construction for radiation-tolerant environments

Applications

• Radiation-hardened analog signal processing circuits
• High-reliability military aerospace systems
• Spacecraft avionics and control subsystems

Procurement Notes

Verify the specific ordering suffix and manufacturer documentation to confirm compliance with required quality standards. Ensure that the component meets all necessary environmental and reliability specifications for the intended application before procurement.

Selection Notes

Select this component when high current gain and wide operating temperature ranges are required in radiation-exposed environments. Confirm that the TO-78-6 package dimensions and pinout align with the target circuit board layout and thermal management requirements.

Part Context

This part belongs to the JAN series of radiation-hardened semiconductors produced by Microchip Technology. These components are designed to withstand ionizing radiation effects common in space and high-altitude applications, ensuring long-term stability and performance in harsh conditions.

Replacement Considerations

JAN2N2920U/TR